2N6052G, Bipolar (BJT) Single Transistor, PNP, -100 V, 150 W, -12 A, 100 hFE
Product Category: Darlington Transistors
RoHS: Details
Configuration: Single
Transistor Polarity: PNP
Collector- Emitter Voltage VCEO Max: 100 V
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 100 V
Maximum DC Collector Current: 12 A
Pd - Power Dissipation: 150 W
Mounting Style: Through Hole
Package/Case: TO-3
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 200 C
Series: 2N6052
Packaging: Tube
Height: 11.43 mm
Length: 39.36 mm
Operating Temperature Range: - 65 C to + 200 C
Width: 26.67 mm
Continuous Collector Current: 12 A
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