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IPP048N12N3, N-MOSFET, 120V, 120A, 300W, TO220, INFINEON

Denumire Produs: IPP048N12N3, INFINEON

COD: 93556


Preț: 31,46 RON

(Prețul include TVA)
In stoc
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 120 V
Id - Continuous Drain Current: 100 A
Rds On - Drain-Source Resistance: 4.8 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 137 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 300 W
Channel Mode: Enhancement
Tradename: OptiMOS
Packaging: Tube
Brand: Infineon Technologies
Configuration: Single
Fall Time: 19 ns
Forward Transconductance - Min: 162 S, 81 S
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFET
Rise Time: 55 ns
Series: OptiMOS 3
50
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: OptiMOS 3 Power-Transistor
Typical Turn-Off Delay Time: 64 ns
Typical Turn-On Delay Time: 31 ns
Width: 4.4 mm
Part # Aliases: SP000652734 IPP48N12N3GXK IPP048N12N3GXKSA1
 
 
 
 
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