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IXFH26N60P, N-MOSFET, 600V, 26A, IXYS

Denumire Produs: IXFH26N60P, IXYS

COD: 81201


Preț: 58,49 RON

(Prețul include TVA)
Stoc Limitat
Manufacturer: IXYS 
Product Category: MOSFET 
RoHS:  Details  
Technology: Si 
Mounting Style: Through Hole 
Package/Case: TO-247-3 
Number of Channels: 1 Channel 
Transistor Polarity: N-Channel 
Vds - Drain-Source Breakdown Voltage: 600 V 
Id - Continuous Drain Current: 26 A 
Rds On - Drain-Source Resistance: 270 mOhms 
Vgs - Gate-Source Voltage: 30 V 
Minimum Operating Temperature: - 55 C 
Maximum Operating Temperature: + 150 C 
Configuration: Single 
Pd - Power Dissipation: 460 W 
Channel Mode: Enhancement 
Tradename: HyperFET 
Packaging: Tube 
Height: 21.46 mm  
Length: 16.26 mm  
Series: IXFH26N60  
Transistor Type: 1 N-Channel  
Width: 5.3 mm  
Brand: IXYS  
Forward Transconductance - Min: 26 S  
Fall Time: 21 ns  
Product Type: MOSFET  
Rise Time: 27 ns  Subcategory: MOSFETs  
Typical Turn-Off Delay Time: 75 ns  
Typical Turn-On Delay Time: 25 ns
 
 
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