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Ofertă specială de transport pentru persoane fizice
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VISHAY SILICONIX - SI4431CDY-T1-GE3 - MOSFET,P CH,DIODE,30V,9A,8-SOIC
- MOSFET,P CH,DIODE,30V,9A,8-SOIC
- Transistor Polarity: P Channel
- Continuous Drain Current Id: -9A
- Drain Source Voltage Vds: -30V
- On Resistance Rds(on): 0.026ohm
- Rds(on) Test Voltage Vgs: -10V
- Power Dissipation Pd: 2.5W
- Operating Temperature Range: -55°C to +150°C
- Transistor Case Style: SOIC
- No. of Pins: 8
- Current Id Max: -7A
- Power Dissipation Pd: 2.5W
- Voltage Vgs Max: -20V